Controlling magnetism by electrical means is a key challenge to better information technology. Electrical control of magnetism has been explored in a variety of materials including dilute magnetic semiconductors, ferromagnetic metal thin films and multiferroics. The newly emerged atomically thin materials with interesting orbital and spin magnetic properties have presented a promising system for electrical control of magnetism.  In this talk, Dr. Shan will discuss the generation of magnetization by a charge current in strained monolayer MoS2 as a result of the Berry curvature effect.  She will also discuss recent results on tuning the magnetic properties of 2D magnet CrI3 by electric field or electrostatic doping.  In particular, in bilayer CrI3, which consists of two Ising ferromagnetic monolayers coupled antiferromagnetically, she has achieved reversible switching of the interlayer magnetic order between the antiferromagnetic and ferromagnetic states.